What is the principle of sputtering target

Sputtering target is a new physical vapor coating method, which has obvious advantages in many aspects compared with earlier evaporation coating method.  As a mature technology, magnetron sputtering has been applied in many fields. The company makes "new concept, new technology, sputtering target new products" and "the pursuit of customer satisfaction" as our goal.  Committed to the implementation of IS9001 quality management system, and has obtained a number of patents.  After years of efforts, high purity, high density, monomer SiO2, MgF2, Ta2O5, Nb2O5, TiO2, ZrO2, Ti3O5, Al2O3 complex oxides such as Ti-Ta, Al-La, Ta-Ti, Si-Al, Tio2-La2O3 have been developed and produced for precision optical applications  And all kinds of targets.  

Sputtering target material principle: 

Sputtering target material principle: an orthogonal magnetic field and electric field are added between the sputtering target pole (cathode) and anode, and the required inert gas (usually AR gas) is filled in the high vacuum chamber. The permanent magnet forms a magnetic field of 250 ~ 350 Gauss on the surface of the target material, which forms an orthogonal electromagnetic field with the high voltage electric field.  Under the action of electric field, AR gas ionization into positive ions and electrons, target and has certain negative pressure, sputtering target material from the target from the pole by the effect of magnetic field and the working gas ionization probability increase, form a high density plasma near the cathode, AR ion under the action of Lorentz force, speed up to fly to the target surface, bombarding target surface at a high speed,  The sputtered atoms on the target follow the momentum conversion principle and fly away from the target with high kinetic energy to the substrate for film deposition. 

Magnetron sputtering is generally divided into two kinds: DC sputtering and rf sputtering. The principle of DC sputtering equipment is simple, and the rate of sputtering target is fast when sputtering metal.  The use of rf sputtering is more extensive, in addition to sputtering conductive materials, also can sputter non-conductive materials, but also reactive sputtering to prepare oxides, nitrogen and carbide and other compound materials.  If the frequency of radio frequency is increased, it becomes microwave plasma sputtering. At present, electron cyclotron resonance (ECR) microwave plasma sputtering is commonly used.

For sputtering target materials evaporation materials, excellent performance, high ratio of sputtering target materials have been successfully batch used in projection television, digital cameras, digital display of a variety of optical system for evaporation materials used, and the incremental development of 50% per year, the annual output of 40 tons, more than 80% and the number of products to Japan, Taiwan, Europe and the United States, sales volume is increasing year by year.