Operation process of magnetron sputtering coating target material

The operation process of magnetron sputtering target is not clear to many people, and the work content of magnetron sputtering target is not understood. Here is a brief introduction for you.  The basic principle of magnetron sputtering is to use plasma in AR-02 mixed gas to be bombarded by accelerated high-energy particles on the target surface under the action of electric field and alternating magnetic field. After energy exchange, atoms on the target surface escape from the original lattice and transfer to the matrix surface to form a film.

Magnetron sputtering is characterized by high film forming rate, low substrate temperature, good film adhesion, and large area coating.  The technology can be divided into DC magnetron sputtering and RF magnetron sputtering.

Magnetron sputtering is a kind of "high speed low temperature sputtering technology" developed rapidly in the 1970s. Magnetron sputtering is to form an orthogonal electromagnetic field above the surface of the cathode target. When the secondary electrons generated by sputtering are accelerated to high energy electrons in the cathode region, they do not fly directly to the anode, but oscillate back and forth under the action of orthogonal electromagnetic field. High energy electrons constantly collide with gas molecules and transfer energy to them, ionizing them and becoming low energy electrons themselves. These low energy electrons eventually drift to the auxiliary anode near the cathode along the magnetic field lines and are absorbed, avoiding the intense bombardment of high-energy electrons on the plate, eliminating the root cause of the plate being heated by bombardment and the damage caused by electron irradiation in the bipolar sputtering, reflecting the characteristics of "low temperature" of the plate in magnetron sputtering. Due to the presence of external magnetic field, the complex motion of electrons increases the ionization rate and achieves high speed sputtering. Magnetron sputtering technology is to generate a magnetic field perpendicular to the direction of the electric field in the cathode target attachment, generally achieved by permanent magnet.