Characteristics of magnetron sputtering target material

Magnetron sputtering coating is a new physical vapor coating method, compared with earlier evaporation coating method, its many advantages are quite obvious.  As a mature technology, magnetron sputtering has been applied in many fields.

Principle of magnetron sputtering target material:

An orthogonal magnetic field and electric field are added between the sputtered target pole (cathode) and anode, and the required inert gas (usually AR gas) is filled in a high vacuum chamber. The permanent magnet forms a magnetic field of 250 ~ 350 Gauss on the surface of the target material, which forms an orthogonal electromagnetic field with the high voltage electric field. Under the action of electric field, AR gas ionization into positive ions and electrons, target and has certain negative pressure, from the action of the target from the extremely affected by magnetic field and increase of working gas ionization probability, form a high density plasma near the cathode, AR ion under the action of Lorentz force, speed up to fly to the target surface, bombarding target surface at a high speed,  The sputtered atoms on the target follow the momentum conversion principle and fly away from the target with high kinetic energy to the substrate for film deposition.  Magnetron sputtering is generally divided into two kinds: tributary sputtering and RF sputtering. The principle of tributary sputtering equipment is simple, and the rate is fast when sputtering metal. The use of RF sputtering is more extensive. In addition to the sputtering conductive materials, it can also sputter non-conductive materials, while also preparing reactive sputtering oxides, nitrides and carbides and other compound materials. If the frequency of radio frequency is increased, it becomes microwave plasma sputtering. At present, electron cyclotron resonance (ECR) microwave plasma sputtering is commonly used. Other ceramic targets, chromium-doped silicon monoxide ceramic target (CR-SiO), indium phosphating target (InP), lead arsenide target (PbAs), indium arsenide target (InAs).

Classification of magnetron sputtering coating target material:

Metal sputtering target material, coating alloy sputtering coating material, ceramic sputtering coating material, boride ceramic sputtering target materials, carbide ceramic sputtering target material, fluoride ceramic sputtering target material, nitride ceramic sputtering target materials, oxide ceramic target, selenide ceramic sputtering target material, silicide ceramic sputtering target materials, sulfide ceramic sputtering target material, telluride ceramic sputtering target material,  Other ceramic targets, chromium-doped silicon monoxide ceramic target (CR-SiO), indium phosphating target (InP), lead arsenide target (PbAs), indium arsenide target (InAs).