PECVD system for deposition of thick SiOx Ge-SiOx films

PECVD system for deposition of thick SiOx Ge-SiOx films

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Plasma -enhanced chemical vapor deposition (PECVD) is a type of chemical vapor deposition characterized by the use of plasma activation at low temperatures to enhance the chemical vapor deposition reaction. The advantages of this method are that the deposition temperature is low, the deposition rate is fast, and the film produced has excellent electrical properties, good substrate adhesion and excellent step coverage.

PECVD vapor deposition application areas:

Plasma enhanced CVD systems can be used in: graphene preparation, sulfide preparation, nanomaterials preparation and other test sites. A variety of films such as SiOx, SiNx, amorphous silicon, microcrystalline silicon, nano -silicon, SiC, diamond-like, etc. can be deposited on the surface of flake or similar shape samples, and P -type and N-type doped films can be deposited. The deposited film has good uniformity, compactness, adhesion and insulation. Widely used in cutting tools, high-precision molds, hard coatings, high-end decoration and other fields, PECVD vapor deposition has a wide range of applications in ultra -large scale integrated circuits, optoelectronic devices, MEMS and other fields.

Technical parameters:

	Model number	CY-PECVD-200SST
	Cavity size	Phi 500 -
	Warm zone length	200
	Rf power supply	500W-
	Temperature	1000 ℃
	Pump for forestage	Molecular pump set
	Display type	T
	Warm zone	I-
	Water cooler	CW5200
	Cavity material	SS
	Sample heating Heating temperature	Above RT-1000℃, temperature control accuracy: ±1。C, using temperature control meter for temperature control; Adjustable speed: 1-20rpm adjustable
	Spray head size	Φ90mm, the electrode spacing between the spray head and the sample 40-100mm online continuous adjustable (can be adjusted according to the process), and with a ruler index display
	Sample Table	200mm diameter
	Working vacuum for deposition	0.133-133Pa (can be adjusted according to process)
	Top flange	It can be lifted by motor, the substrate is easy to change, and there is a visual port
Substrate Table			Linear and azimuth motion of the substrate table, substrate heating and temperature control, mounting table and touch screen control, substrate linear motion is manually controlled, and substrate rotation is controlled by DC motors
Vacuum chamber			Front door opening type, φ500mm X 500mm stainless steel
Observation window			φ100mm with baffle
Mass flowmeter			Six way mass flow meter
Number paths of gas			Six paths
Pressure range			0.15 Mpa to 0.15 Mpa
Range			0 to 100 SCCM (oxygen) 0 to 100 SCCM (CF4) 0 to 200 SCCM (SF6) 0 to 200 SCCM (argon) 0 to 500 SCCM (other gases air) 0-500 SCCM (other gases nitrogen)
Flow control range			Plus or minus 1.5%
Gas path material			304 stainless steel
Pipe joint			6.35mm bushing joint
Vacuum system			Front pump: oil-free vacuum pump 4.7L/S Molecular pump: 1200L/S
Measuring range			1 x 10-5 to 1 x 105Pa
Measurement accuracy			1 x 10-5 ~ 1 x 10-4Pa±40% reading 1 x 10-4 ~ 1 x 105Pa for a reading of ±20%