Home > Products > Sputtering Targets
Silicon Carbide (SiC) Sputtering Targets

Silicon Carbide (SiC) Sputtering Targets

    Silicon Carbide (SiC) Sputtering Targets


Our comprehensive offering of sputtering targets, evaporation sources and other deposition materials is listed by material throughout the website. Below you will find budgetary pricing for sputtering targets and deposition materials per your requirements. Actual prices may vary due to market fluctuations. To speak to someone directly about current pricing or for a quote on sputtering targets and other deposition products not listed

Silicon Carbide (SiC) Specifications

Material Type

Silicon Carbide

Symbol

SiC

Melting Point (°C)

~2,700

Theoretical Density   (g/cc)

3.22

Z Ratio

**1.00

Sputter

RF

Max Power Density

(Watts/Square Inch)

30*

Type of Bond

Indium, Elastomer

Comments

Sputtering preferred.

 


Contact Us
  • E-mail: cysi@cysi.wang
  • Tel: +86 371 5519 9322
  • Fax: +86 371 8603 6875
  • Add: No. 820, 8th Floor, 1st Unit, 9th Block, Cuizhu Street, High-Tech Zone, Zhengzhou, Henan, China




Follow Us

Copyright © Zhengzhou CY Scientific Instrument Co., Ltd. All Rights Reserved    Update cookies preferences

| Sitemap |       Technical Support: