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2MHz RF power supply for magnetron sputtering2MHz RF power supply for magnetron sputtering2MHz RF power supply for magnetron sputtering

2MHz RF power supply for magnetron sputtering

    Radio frequency power (RF power) has a wide range of applications in many fields, Including magnetron sputtering, plasma enhanced chemical vapor deposition, plasma polymerization and other technologies, RF power is used to excite gas to form plasma, thereby promoting the deposition of thin films.

Radio frequency power (RF power) has a wide range of applications in many fields. The following are some of the main application areas:

Semiconductor manufacturing: RF power is widely used in plasma enhanced chemical vapor deposition (PECVD), reactive ion etching (RIE), magnetron sputtering and other processes in the semiconductor manufacturing process to generate and maintain plasma.

Thin film deposition: Including magnetron sputtering, plasma enhanced chemical vapor deposition, plasma polymerization and other technologies, RF power is used to excite gas to form plasma, thereby promoting the deposition of thin films.

Surface treatment: RF power plays an important role in material surface modification, etching, cleaning, etc., such as optical coating, coating, surface etching, glass and ceramic processing.

Medical equipment: RF power is also used in some medical equipment, such as radio frequency ablation technology for the treatment of arrhythmias and tumors.

Plasma cutting and welding: In metal processing, RF power is used in plasma cutting and welding processes to provide energy for the plasma arc.

Communication equipment: In the fields of radio transmitters, antenna tuning, electromagnetic compatibility testing, etc., RF power provides the necessary signal power.

Material processing: including fiber preform manufacturing, synthetic diamond, nanomaterial preparation, etc. RF power is used to drive plasma reactors.

These application areas demonstrate the importance of RF power in modern industry, especially in areas involving precision manufacturing and material processing.

The frequency power supply adopts Class E amplifier to achieve maximum efficiency and high reliability. The large redundant design enables it to have long-term full power output capability. The special filter network achieves pure waveform. The harmonic performance is excellent and can withstand extreme impacts such as open circuit and short circuit. Large screen LCD display: set power, incident power, reflected power, status and other parameters Application field: This power supply can be used as a power supply for RF driven plasma system. Application objects include: etching, PECVD, magnetron sputtering, ICP, etc. Control mode: This power supply has various control modes: RS232, RS485, DeviceNet and analog port.

RF power supply Technical parameters:

Product specifications

1250W

2500W

Output power

0-1250W 

0-2500W

Working stability

≤±0.5%

Output frequency

2MHz

Frequency signal

Standard sine wave

Input voltage

AC180-250V

Input current

10A

10A/ Three-phase

Output impedance

50Ω


Cooling method

Air Cooling

Water Cooling

Communication port

RS232/RS48525kg standard Modbus

Analog control interface

DB15

Output interface

N

Chassis size

459x440x89mm

standard 2U

459x440x133mm

standard 3U

Panel size

480x89mm

480x133mm

Weight

13kg

25kg

 


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  • Tel: +86 371 5519 9322
  • Fax: +86 371 8603 6875
  • Add: No. 820, 8th Floor, 1st Unit, 9th Block, Cuizhu Street, High-Tech Zone, Zhengzhou, Henan, China




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