RF plasma cleaner is a plasma cleaner or etching unit with 8.5 "Dia×14"Length quartz chamber and 0 - 80W variable RF power. It is designed to clean and remove nano-scale organic contamination on the substrate or wafer up to 8" using air, oxygen, or argon plasma.The rate of organic removal is about 20 nm/min Maximum at high RF power.
RF plasma cleaner is an excellent tool to pre-clean single crystal substrate before epitaxial film deposition to achieve the better quality.This machine mainly removes the oxide layer and contaminants on the substrate by plasma of air, oxygen or argon gas, and also changes the surface properties of the object (such as hydrophilicity and hydrophobicity),It is an ideal equipment for substrate cleaning and film processing. Pretreatment of single crystal epitaxial films before their growth will have a significant effect on the growth.
Input Power |
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RF Power |
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Control Panel |
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Vacuum Pump and Valve |
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Inert Gas |
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Overall Dimensions |
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Warranty | One year limited warranty with lifetime support ( no warranty for Pyrex glass chamber ) |
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