Medium plasma cleaner has a 6" Dia×6.5"Length quartz chamber. It is designed to clean and remove nano-scale organic contamination on the substrate or wafer up to 4" using air, oxygen, or argon plasma.The rate of organic removal is about 20 nm/min Maximum at high RF power.
Medium plasma cleaner is an excellent tool to pre-clean single crystal substrate before epitaxial film deposition to achieve the better quality.
1. Through the buttons and switches of the control panel, the RF power, vacuum pump opening and closing and cleaning time can be controlled.
2. Information such as time, power, and vacuum are displayed on a set of 4-digit digital tubes.
3. with a three-way valve, can accurately control the intake air flow, as well as a large airflow cleaning cavity, the air inlet interface is a 6mm ferrule interface.
4. Select high-power RF power equipment for plasma etching and plasma ashing experiments.
Input Power |
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RF Power |
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Control Panel | Control Function: Clean time, RF Power, Vacuum Pump. |
Plasma Chamber |
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Vacuum Pump |
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Inert Gas |
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Dimensions | 400mm L ×300mm W ×300mm H 16"×12" ×12" (inch) |
Net weight | 30lbs |
Warranty | One year limited warranty with lifetime support ( no warranty for Pyrex glass chamber ) |
Application Note | Positive Pressure may damage Plasma Quartz Chamber. |
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