Atomic Layer Deposition (ALD) system for Semiconductor Manufacturing

ALD systems are precise devices used for depositing ultra-thin films on substrates with atomic-level thickness control. They are commonly used in semiconductor manufacturing, nanotechnology, optoelectronics, and other high-tech fields.

Product Features:

Precise Thickness Control: ALD achieves atomic-level precision by introducing different precursor gases alternately, ensuring uniform film deposition.

Uniform Film Coverage: Capable of depositing films uniformly on complex 3D structures and substrates with high aspect ratios.

Material Compatibility: Can deposit various materials including oxides, nitrides, metals, and alloys.

High-Quality Films: Films produced are dense, defect-free, and have excellent electrical and mechanical properties.

Gentle Process Conditions: ALD processes are typically conducted at low temperatures, making them suitable for heat-sensitive materials.

Technical parameter:

 Main parts:

 Application: 

1.Semiconductor Manufacturing:

Gate Oxides: Used in the production of advanced semiconductor devices, such as Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs).

High-k Dielectrics: Deposition of high dielectric constant materials in integrated circuits to enhance device performance and reduce leakage.

Copper Interconnects: Improvement of copper interconnect structures in semiconductor chips by depositing barrier layers and seed layers. 

2.Memory Devices: 

DRAM and Flash Memory: Deposition of high-k materials and conductive layers in Dynamic Random Access Memory (DRAM) and flash memory (e.g., 3D NAND) to enhance storage density and performance.

 3.Optoelectronic Devices:

Solar Cells: Deposition of transparent conductive oxides or passivation layers in thin-film solar cells to enhance photovoltaic conversion efficiency.

LEDs and OLEDs: Deposition of emissive layers and electrode materials to improve the performance of Organic Light-Emitting Diodes (OLEDs) and Light-Emitting Diodes (LEDs).

 4.Nanotechnology:

Nanostructure Coatings: Uniform deposition of thin films on complex nanostructures like nanowires and nanotubes to optimize optical and electrical properties.

Quantum Dot Coatings: Deposition of protective or functional thin films on quantum dot materials to enhance their stability and efficiency.

 5.Protective Coatings:

Electronics: Deposition of moisture-resistant and corrosion-resistant coatings on electronic devices to extend their lifespan.

Medical Devices: Deposition of biocompatible coatings on biomaterials and implants to improve their compatibility with human tissues.

 6.Catalyst Preparation:

Precise Catalyst Layers: Enhancement of catalytic performance by controlling the thickness and distribution of catalyst layers, widely used in chemical reactions and energy conversion.

 7.Energy Storage:

Battery Electrodes: Deposition of thin film electrode materials in lithium-ion batteries and supercapacitors to increase energy density and cycle life.

Fuel Cells: Deposition of thin films on electrodes and proton exchange membranes in fuel cells to improve efficiency and durability.

 8.Sensors:

Gas Sensors: Deposition of sensitive thin films on gas sensors to enhance their detection sensitivity and selectivity for target gases.

Biosensors: Deposition of functional thin films on biosensors to improve their ability to recognize and detect biomolecules.

 9.Display Technology:

Thin-Film Transistors (TFTs): Used in the manufacture of thin-film transistors in Liquid Crystal Displays (LCDs) and Organic Light-Emitting Displays (OLEDs) to improve display performance.

Touch Screens: Deposition of conductive thin films in touch screens to enhance their electrical performance and touch sensitivity.

 Application Case (Depositing Al₂O₃ on Silicon or Glass Substrates)：

The process of depositing aluminum oxide (Al₂O₃) thin films on silicon or glass substrates using Atomic Layer Deposition (ALD) technology typically includes the following steps. This process primarily relies on the alternating introduction of precursors and reactive gases to achieve atomic-level film growth.

 1.Substrate Preparation

Cleaning the Substrate: Clean the silicon or glass substrate thoroughly, typically using chemical cleaning methods to remove organic contaminants and particles. For silicon substrates, hydrofluoric acid (HF) etching may be performed to remove the surface oxide layer.

Drying the Substrate: Use nitrogen or other anhydrous gases to dry the substrate, ensuring that no moisture remains on the surface.

 2.Loading the Substrate

Placing the Substrate: Place the cleaned silicon or glass substrate on the sample holder in the ALD system, ensuring that the smooth side is facing up.

Entering the Vacuum Chamber: Close the sample chamber of the ALD system and evacuate the air, typically reducing the chamber pressure to the range of 10⁻³ to 10⁻⁶ Torr.

 3.Heating the Substrate

Setting the Temperature: Heat the substrate to an appropriate deposition temperature. For Al₂O₃ deposition, the temperature is usually between 150°C and 300°C, depending on the precursor used and the desired film quality.

Stabilizing the Temperature: Before starting the deposition, ensure that the substrate temperature is stable and evenly distributed.

 4.Depositing Aluminum Oxide (Al₂O₃)

Pulse Precursor 1 (TMA): Introduce trimethylaluminum (TMA) as the aluminum source precursor. The TMA molecules react chemically with the substrate surface, adsorbing a single atomic layer. This process typically lasts a few seconds.

Purge Step: Stop the flow of TMA precursor gas and flush the reaction chamber with an inert gas (such as nitrogen or argon) for a few seconds to remove any unreacted TMA molecules and reaction by-products.

Pulse Precursor 2 (Water or Ozone): Introduce water vapor or ozone as the oxygen source precursor, which reacts with the adsorbed TMA layer to form Al₂O₃, releasing by-products (such as methane). This step also lasts a few seconds.

Purge Step: Again, flush the reaction chamber with an inert gas to ensure that only the desired Al₂O₃ thin film remains.

 5.Repeating the Deposition Cycles

Number of Cycles: Repeat the above "Pulse TMA - Purge - Pulse Oxygen Source - Purge" steps according to the required film thickness. Each cycle typically grows about 0.1 to 0.2 nanometers of Al₂O₃ on the substrate surface.

Controlling Film Thickness: Adjust the number of cycles to control the total thickness of the aluminum oxide thin film.

 6.Cooling and Unloading

Cooling the Substrate: After deposition is complete, reduce the reaction chamber temperature to allow the substrate to cool to room temperature.

Unloading the Substrate: Stop the deposition in a vacuum environment, restore the chamber to atmospheric pressure, open the chamber, and remove the deposited silicon or glass substrate.

 7.Post-Treatment (Optional)

Post-Annealing: Depending on the application requirements, the deposited Al₂O₃ thin film may undergo heat treatment (such as annealing in an oxygen environment) to improve the film's physical and chemical properties.

 8.Thin Film Characterization

Measuring Film Thickness: Use an ellipsometer or other thickness measurement equipment to check if the deposited Al₂O₃ film thickness meets expectations.

Surface Morphology Analysis: Examine the surface flatness and uniformity of the film using a Scanning Electron Microscope (SEM) or Atomic Force Microscope (AFM).