Three temperature zone PECVD graphene preparation

The plasma enhancement CVD system consists of plasma generator, three-temperature tubular furnace, radio frequency power supply and vacuum system. Plasma enhanced CVD system in order to make the chemical reaction at lower temperature, the use of plasma activity to promote the reaction, so the CVD is called plasma enhanced chemical vapor deposition method (PECVD), the PECVD graphene film preparation equipment with the radio frequency output of 13.56Mhz make film atoms gas ionization, forming plasma, using plasma strong chemical activity, improve the reaction conditions, using the plasma activity to promote the reaction, deposit the desired film on the substrate.

PECVD application area:

Plasma-enhanced CVD system can be used in: graphene preparation, sulfide preparation, nanomaterials preparation and other test sites. SiOx, SiNx, amorphous silicon, microcrystalline silicon, nanosilicon, SiC, diamond-like films can be deposited on the surface of sheet or similar shapes, and p-type and n-type doped films can be deposited. The deposited films have good uniformity, tightness, adhesion, and insulation. It is widely used in cutting tool, high precision mold, hard coating, high duan decoration and other fields

PECVD technical parameters in the three-temperature zone: