1600 degree Sliding Rail PECVD

Plasma Enhanced Chemical Vapor Deposition (PECVD) is a type of Chemical Vapor Deposition characterized by the use of low-temperature plasma to activate and enhance the chemical vapor deposition reaction. The advantages of this method include low deposition temperature, fast deposition rates, and the production of films with excellent electrical properties, good substrate adhesion, and superior step coverage.

Product Overview:

The Sliding Rail PECVD (Plasma Enhanced Chemical Vapor Deposition) is equipment used for the manufacture of thin films in semiconductor, photovoltaic, Micro-Electro-Mechanical Systems (MEMS), and other fields. PECVD technology decomposes gaseous precursors via plasma, which facilitates the deposition of thin film materials on the substrate surface. The sliding rail design features a system that moves the substrate along a fixed track during deposition, ensuring uniform film thickness and efficient production.

Product Features:

1. High Precision Control: The sliding rail design allows for precise substrate movement, ensuring uniform thin film deposition across the entire substrate surface.

2. Large-Area Deposition: Suitable for handling large-area substrates such as solar panels and display panels, enabling uniform thin film deposition on large-sized substrates.

3. Versatility: Compatible with a variety of gaseous precursors, making it suitable for depositing various thin film materials such as silicon oxide, silicon nitride, silicon carbide, and more.

4. Efficient Production: The high level of automation in the sliding rail PECVD system enables high-throughput production, ideal for large-scale manufacturing.

5. Uniformity and Repeatability: Precise control over substrate movement speed and plasma parameters ensures thin film uniformity and repeatability.

Purchase Information:

If you are interested in our sliding rail PECVD system, please contact us for more information and quotations.

Phone: +86 18516380382

Email: Jimmy@cysitech.com

Contact Person: Jimmy Hao

WeChat: +86 18516380382

Technical Specifications:

Main Components:

Application Areas:

Semiconductor Manufacturing: Used for depositing dielectric layers, passivation layers, etc.

Photovoltaic Industry: Used for manufacturing antireflection layers, passivation layers, etc., for solar cells.

Display Technology: Used for depositing insulating layers and protective layers in thin-film transistors (TFTs).

Micro-Electro-Mechanical Systems (MEMS): Used for depositing thin films in various MEMS devices.

Application Case: Deposition of Silicon Oxide (SiO₂) Insulation Layer on Gallium Nitride (GaN) Substrate Using High-Temperature Sliding Rail PECVD

Process Steps:

1. Substrate Preparation

Substrate Cleaning: Clean the GaN substrate to remove organic contaminants, oxide layers, and particles on the surface. Common methods include ultrasonic cleaning, chemical cleaning (e.g., using hydrofluoric acid to remove oxides), and rinsing with deionized water.

Surface Treatment: Plasma treatment (e.g., oxygen plasma) can be applied to the GaN substrate to increase surface activity and enhance the adhesion of the silicon oxide film.

2. PECVD System Preparation

System Cleaning: Ensure that the PECVD equipment interior is free from contaminants or residual deposition. High-temperature processes require high levels of cleanliness to avoid particle contamination or impurities affecting film quality.

Gas Preparation: Prepare high-purity precursor gases such as silicon tetrachloride (SiCl₄) or silane (SiH₄) as the silicon source, oxygen (O₂) as the oxygen source, and argon (Ar) as the carrier or plasma-enhancing gas.

3. Process Parameter Settings

Gas Flow:

Silicon Source (SiH₄ or SiCl₄): Used to provide silicon, the flow rate is adjusted based on the deposition rate and film properties.

Oxygen (O₂): Acts as the oxygen source, reacting with the silicon source to form the SiO₂ film. The flow rate should be matched with the silicon source to ensure uniform deposition.

Working Pressure: Set within the range of 100–300 mTorr to ensure plasma stability and effective distribution of the reactive gases.

Plasma Power: Adjust RF power to excite the plasma, typically choosing higher power to ensure uniform plasma formation under high-temperature conditions.

Substrate Temperature: Set the substrate temperature between 600°C and 800°C to promote dense growth of the SiO₂ film and reduce internal stress within the film. 

4. Film Deposition Process

Substrate Loading: Load the cleaned and treated GaN substrate onto the substrate holder of the sliding rail PECVD system. Ensure that the substrate moves smoothly along the rail, avoiding vibrations or displacements during deposition, which could lead to uneven film thickness.

Gas Introduction: Introduce the SiH₄ or SiCl₄ and O₂ gases, and initiate the plasma. Once the reaction begins, the SiO₂ film forms on the substrate surface.

Sliding Rail Movement: The sliding rail system moves the substrate slowly through the plasma region, ensuring uniform deposition of the SiO₂ film across the entire substrate surface.

Deposition Time Control: Adjust the sliding rail speed and deposition time based on the target film thickness and process requirements. Typically, SiO₂ film thickness ranges from 100 to 500 nm, requiring deposition times of a few minutes to several tens of minutes.

5. Post-Processing

Cooling: After deposition, gradually reduce the substrate temperature to room temperature to avoid stress concentration that could cause film cracking or delamination.

Quality Inspection: After removing the substrate, measure the film thickness using ellipsometry and analyze the film composition and quality using X-ray photoelectron spectroscopy (XPS) or Fourier-transform infrared spectroscopy (FTIR). Additionally, inspect the film’s surface morphology using a scanning electron microscope (SEM).

6. Quality Control and Optimization

Stress Testing: Test the stress of the SiO₂ film using X-ray diffraction (XRD) or stress testing equipment. Adjust process parameters to optimize the mechanical properties of the film.

Electrical Performance Testing: Conduct electrical testing on the SiO₂ film to ensure that its insulating properties meet the design requirements of GaN devices.

7. Process Summary and Feedback

Process Optimization: Based on test results, optimize the PECVD process parameters such as gas flow rates, substrate temperature, and plasma power to improve film quality and consistency.

Data Recording: Record the process parameters and test results of each deposition, building a process database to assist in future process improvements and ensure repeatability.

Common Issues in PECVD Usage and Precautions:

1. Non-Uniform Film Thickness

Causes: Uneven sliding rail speed, non-uniform plasma distribution, and unstable gas flow can cause variations in film thickness.

Solutions: Regularly calibrate the sliding rail system to ensure smooth substrate movement; check the plasma source and gas flow control system for stability and uniformity.

2. Poor Film Adhesion

Causes: Insufficient substrate surface cleanliness or inadequate pre-deposition treatment.

Solutions: Improve substrate cleaning procedures to ensure a contaminant-free surface; optimize pre-treatment steps such as surface activation or pre-cleaning to enhance film adhesion.

3. Plasma Damage

Causes: Excessive power or prolonged deposition time may damage the substrate surface, especially for sensitive materials.

Solutions: Optimize plasma parameters, such as power, frequency, and deposition time, to avoid excessive exposure to plasma. 

4. Particle Contamination

Causes: Contaminants inside the deposition chamber, uncleaned residual deposits, or gas impurities can lead to particle contamination.

Solutions: Regularly clean the deposition chamber and maintain a clean environment; use high-purity gases to avoid introducing impurities.

5. Mechanical Failure of Equipment

Causes: Mechanical components in the sliding rail system, such as motors and rails, may wear out or fail after prolonged use.

Solutions: Regularly maintain and replace worn-out components to ensure normal equipment operation; conduct preventive maintenance to address issues before they occur.

Precautions in PECVD Usage:

1. Calibration of the Sliding Rail System

Regularly calibrate the sliding rail system to ensure accurate substrate movement and avoid non-uniform film deposition due to rail deviations.

2. Gas Purity and Flow Control

Use high-purity precursor gases to avoid impurities affecting film quality; ensure precise control of gas flow to prevent unstable deposition rates.

3. Maintenance of Plasma Source

The stability of the plasma source directly affects film quality, so it requires regular checks and maintenance to ensure normal operation.

4. Environmental Cleanliness

PECVD systems require a high level of cleanliness; maintain a dust-free and uncontaminated environment to avoid external pollutants entering the deposition chamber.

5. Safe Operation

PECVD involves high temperatures and high-energy plasma, so operators should strictly follow safety procedures, wear protective equipment, and avoid direct contact with harmful gases or plasma.

By following correct operating procedures and regular maintenance, common issues in the sliding rail PECVD system can be effectively avoided, ensuring long-term stable operation of the equipment and achieving high-quality film deposition.