1400 degree Sliding Rail PECVD

Plasma Enhanced Chemical Vapor Deposition (PECVD) is a type of Chemical Vapor Deposition characterized by the use of low-temperature plasma to enhance the chemical vapor deposition reaction. The advantages of this method include low deposition temperature, fast deposition rates, and the production of films with excellent electrical properties, good substrate adhesion, and superior step coverage.

 Product Overview:

 The Sliding Rail PECVD (Plasma Enhanced Chemical Vapor Deposition) is equipment used for the manufacture of thin films in semiconductor, photovoltaic, Micro-Electro-Mechanical Systems (MEMS), and other fields. PECVD technology decomposes gaseous precursors via plasma, which facilitates the deposition of thin film materials on the substrate surface. The sliding rail design ensures uniform film thickness and efficient production by moving the substrate along a fixed track during deposition. 

Product Features:

1. High Precision Control: The sliding rail design allows for precise substrate movement, ensuring uniform thin film deposition across the entire substrate surface.

2. Large-Area Deposition: Suitable for handling large-area substrates such as solar panels and display panels, enabling uniform thin film deposition on large-sized substrates.

3. Versatility: Compatible with a variety of gaseous precursors, making it suitable for depositing various thin film materials such as silicon oxide, silicon nitride, silicon carbide, and more.

4. Efficient Production: The high level of automation in the sliding rail PECVD system enables high-throughput production, ideal for large-scale manufacturing.

5. Uniformity and Repeatability: Precise control over substrate movement speed and plasma parameters ensures thin film uniformity and repeatability.

Purchase Information:

If you are interested in our sliding rail PECVD system, please contact us for more information and quotations.

Phone: +86 18516380382

Email: Jimmy@cysitech.com

Contact Person: Jimmy Hao

WeChat: +86 18516380382

Technical Specifications:

Main Components:

Application Areas:

Semiconductor Manufacturing: Used for depositing dielectric layers, passivation layers, etc.

Photovoltaic Industry: Used for manufacturing antireflection layers, passivation layers, etc., for solar cells.

Display Technology: Used for depositing insulating layers and protective layers in thin-film transistors (TFTs).

Micro-Electro-Mechanical Systems (MEMS): Used for depositing thin films in various MEMS devices. 

Application Case: Deposition of Silicon Nitride (SiNx) Film on Solar Cell Surface Using Sliding Rail PECVD

 Process Steps: 

1. Substrate Preparation

Substrate Cleaning: Clean the SiC substrate to remove organic contaminants, oxide layers, and particles on the surface. Common methods include ultrasonic cleaning, chemical cleaning (such as hydrofluoric acid cleaning), and rinsing with deionized water.

Surface Treatment: Plasma treatment (such as oxygen plasma) can be applied to the SiC substrate to increase surface activity and enhance the adhesion of the passivation layer. 

2. PECVD System Preparation

System Cleaning: Ensure that the PECVD equipment interior is clean and free from contaminants, as cleanliness is critical for film quality, especially in high-temperature processes.

Gas Preparation: Prepare high-purity precursor gases such as silane (SiH₄), ammonia (NH₃), and oxygen (O₂), along with auxiliary gases like argon (Ar) to ensure stable gas supply. 

3. Process Parameter Settings

Gas Flow:

Silane (SiH₄): Used as the silicon source; the flow rate is typically set within an appropriate range to control the deposition rate of the passivation layer.

Ammonia (NH₃): Used as the nitrogen source; the flow rate is matched with SiH₄ for the formation of silicon nitride (SiNx) or silicon oxynitride (SiON) films.

Oxygen (O₂): Can be added if the deposition of oxides or oxynitrides is required.

Working Pressure: Typically set between 100–300 mTorr to ensure even distribution of reactants and plasma stability.

Plasma Power: Choose appropriate RF power to ensure the generation of stable plasma at high temperatures. Excessive power may induce film stress, while insufficient power could degrade film quality.

Substrate Temperature: Set the substrate heating temperature, usually between 700°C to 800°C, to promote dense film growth and reduce internal film stress. 

4. Film Deposition Process

Substrate Loading: Load the cleaned and treated SiC substrate onto the substrate holder in the sliding rail PECVD equipment, ensuring smooth movement on the rail to avoid shaking and misalignment during deposition.

Gas Introduction: Initiate the flow of SiH₄, NH₃, and O₂ gases, and after reaching the set flow rates, introduce them into the plasma region. At this point, the film begins to form gradually on the substrate surface.

Sliding Rail Movement: The sliding rail system drives the substrate slowly through the plasma region, ensuring uniform growth of the passivation layer across the substrate surface.

Deposition Time Control: Control the sliding rail speed and deposition time based on the target film thickness and process requirements. The thickness of the SiNx or SiON passivation layer generally ranges from 100 to 300 nm. 

5. Post-Processing

Cooling: After deposition, gradually reduce the substrate temperature to room temperature to prevent stress concentration, which could cause the film to crack or peel off.

Quality Inspection: After removing the substrate, measure the film thickness and perform surface analysis. Use ellipsometry, optical microscopy, and scanning electron microscopy (SEM) to check the uniformity, surface morphology, and adhesion of the film to the substrate. 

Quality Control and Optimization

Film Stress Testing: Perform mechanical tests or X-ray diffraction (XRD) to assess the stress in the passivation layer, optimizing process parameters to further reduce stress and prevent film cracking.

Electrical Performance Testing: Test the electrical performance of the deposited passivation layer to ensure it provides effective electrical insulation and surface protection. 

Process Summary and Feedback

Process Optimization: Based on quality inspection and test results, further optimize process parameters such as gas flow rates, deposition temperature, and plasma power to improve the quality and consistency of the passivation layer.

Data Recording: Record detailed parameters and results of each deposition process to establish a process database, aiding in future process improvements and repeatability control. 

Common Issues in PECVD Usage and Precautions: 

1. Non-Uniform Film Thickness

Causes: Uneven sliding rail speed, non-uniform plasma distribution, and unstable gas flow can cause variations in film thickness.

Solutions: Regularly calibrate the sliding rail system to ensure smooth substrate movement; check the plasma source and gas flow control system for stability and uniformity. 

2. Poor Film Adhesion

Causes: Insufficient substrate surface cleanliness or inadequate pre-deposition treatment.

Solutions: Improve substrate cleaning procedures to ensure a contaminant-free surface; optimize pre-treatment steps such as surface activation or pre-cleaning to enhance film adhesion. 

3. Plasma Damage

Causes: Excessive power or prolonged deposition time may damage the substrate surface, especially for sensitive materials.

Solutions: Optimize plasma parameters, such as power, frequency, and deposition time, to avoid excessive exposure to plasma. 

4. Particle Contamination

Causes: Contaminants inside the deposition chamber, uncleaned residual deposits, or gas impurities can lead to particle contamination.

Solutions: Regularly clean the deposition chamber and maintain a clean environment; use high-purity gases to avoid introducing impurities. 

5. Mechanical Failure of Equipment

Causes: Mechanical components in the sliding rail system, such as motors and rails, may wear out or fail after prolonged use.

Solutions: Regularly maintain and replace worn-out components to ensure normal equipment operation; conduct preventive maintenance to address issues before they occur. 

Precautions in PECVD Usage: 

1. Calibration of the Sliding Rail System

Regularly calibrate the sliding rail system to ensure accurate substrate movement and avoid non-uniform film deposition due to rail deviations. 

2. Gas Purity and Flow Control

Use high-purity precursor gases to avoid impurities affecting film quality; ensure precise control of gas flow to prevent unstable deposition rates. 

3. Maintenance of Plasma Source

The stability of the plasma source directly affects film quality, so it requires regular checks and maintenance to ensure normal operation. 

4. Environmental Cleanliness

PECVD systems require a high level of cleanliness; maintain a dust-free and uncontaminated environment to avoid external pollutants entering the deposition chamber. 

5. Safe Operation

PECVD involves high temperatures and high-energy plasma, so operators should strictly follow safety procedures, wear protective equipment, and avoid direct contact with harmful gases or plasma. 

By following correct operating procedures and regular maintenance, common issues in the sliding rail PECVD system can be effectively avoided, ensuring long-term stable operation of the equipment and achieving high-quality film deposition.