1200 degree Plasma Enhanced Chemical Vapor Deposition System (PECVD)

1200 degree Plasma Enhanced Chemical Vapor Deposition System (PECVD)

PECVD technology enhances chemical reactions by generating plasma within the reaction chamber, which promotes the chemical reaction and deposition of gaseous precursors on the substrate surface. Compared to traditional CVD, PECVD uses lower energy input and operating temperatures while maintaining the high purity and good adhesion of the thin film.

Equipment composition:

Reaction Chamber: A high-vacuum environment chamber used to accommodate substrates and carry out chemical reactions.

Gas Delivery System: Precisely controls the flow rate of reactive gases and carrier gases.

Radio Frequency (RF) Power Supply: Generates plasma and provides energy to excite chemical reactions.

Temperature Control System: Ensures the uniformity of the substrate temperature during the deposition process.

Vacuum System: Maintains a high-vacuum environment in the reaction chamber.

Monitoring and Control System: Used for real-time monitoring of deposition parameters and equipment status.

Product Overview :

PECVD (Plasma Enhanced Chemical Vapor Deposition) is an advanced thin-film deposition technology that combines the advantages of chemical vapor deposition and plasma technology to achieve high-quality film growth at relatively low temperatures.

Product Features：

Low-Temperature Deposition Capability: Enables thin-film deposition at lower temperatures, suitable for heat-sensitive materials and devices.

High Reaction Activity: The plasma environment increases the activity of reactant gases, promoting chemical reactions, thereby achieving high deposition rates even at lower temperatures.

Excellent Film Quality: PECVD technology produces films with high purity, uniformity, and adhesion.

High Energy Efficiency: PECVD generally has higher energy conversion efficiency compared to other deposition technologies.

Process Controllability: Precise control of RF power, gas flow, pressure, and temperature allows for precise control of film properties.

Wide Material Compatibility: Suitable for depositing various materials, including insulators, semiconductors, metals, and alloys.

Automated Operation: Modern PECVD equipment is usually equipped with an automated control system to improve production efficiency and repeatability.

Purchase Information

If you are interested in our PECVD system, please contact us for more information and a quote.

Phone: 183-3926-3857
Email: jack@cysitech.com
Contact Person: Jack Yang
WeChat: 183 3926 3857 

Tech parameter：

Major parts：

Application Fields:

PECVD is widely used, including but not limited to:

Silicon Nitride (SiN): Known for its excellent dielectric properties, high thermal stability, and low conductivity, applicable in semiconductor devices, biomedical devices, and optical coatings.

Silicon Dioxide (SiO2): A transparent dielectric material with excellent electrical insulation, widely used in semiconductor manufacturing, optical coatings, and protective layers.

Amorphous Silicon (a-Si): With unique electronic properties, used in the production of thin-film solar cells, photodetectors, and display devices.

Diamond-Like Carbon (DLC): Exhibiting diamond-like properties such as high hardness and low friction, applied in cutting tools, wear-resistant surfaces, and biomedical implants.

Metals: Metal films such as aluminum and copper can be used in electrical interconnects, electrodes, and other electronic components.

Silicon Oxynitride (SiON): With excellent optical and electrical properties, it is used in various electronic applications.

Application Case: PECVD Equipment for Silicon Nitride Thin Film Deposition

Required Equipment and Materials:

PECVD Equipment

Silicon Nitride Material

Samples

Vacuum Pump System

Argon (Ar) and Methane (CH4) or other carbon-containing gas supply systems

Temperature Control Devices (if sample temperature control is needed)

Cleaning Equipment (such as ultrasonic cleaners)

Steps:

Substrate Cleaning: First, clean the substrate surface to remove oil and oxides, providing a clean surface for thin film deposition.

Vacuum Preparation: Place the cleaned substrate into the PECVD reaction chamber and evacuate to the required pressure level.

Gas Introduction: Introduce silicon source gas (such as disilane) and nitrogen source gas (such as ammonia or nitrogen) into the reaction chamber. These gases will react under the influence of a high-frequency electric field.

Plasma Activation: Apply RF power to generate plasma, and the silicon nitride thin film will form on the substrate surface due to the plasma-enhanced chemical reactions.

Parameter Control: Precisely control deposition parameters, including RF power, reaction pressure, gas flow rates, and substrate temperature. These parameters will affect the film's quality and characteristics.

Deposition Time: Set and control the deposition time to achieve the desired thickness of the silicon nitride film.

Process Monitoring: Use in-situ monitoring and control systems to ensure the film's quality and uniformity, and monitor plasma parameters, gas flow rates, temperature, and film thickness.

Cooling and Removal: After deposition, turn off the power, allow the substrate and deposited film to cool naturally or perform rapid cooling, and then remove them from the reaction chamber.

Post-Processing: The silicon nitride film may require post-processing, such as annealing, to improve film crystallinity and adhesion.

Quality Testing: Evaluate the film's quality and performance using appropriate characterization techniques (e.g., ellipsometer, atomic force microscope AFM).

Equipment Cleaning and Maintenance:

After the experiment, clean the PECVD equipment's reaction chamber and related components for future use.

Please note that the specific deposition conditions (such as temperature, pressure, gas flow rates, etc.) need to be optimized according to experimental requirements and equipment capabilities.