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CVD vapor deposition system for including metal filmsCVD vapor deposition system for including metal filmsCVD vapor deposition system for including metal films

CVD vapor deposition system for including metal films

    CVD vapor deposition systems are widely used in materials science and engineering for the preparation of various functional thin films, including metal films, oxide films, nitride films, carbon nanotubes, etc. They have important applications in semiconductor, optoelectronics, energy, biomedical, and other fields

CVD (Chemical Vapor Deposition) is a commonly used thin film deposition technique, which involves the reaction of gas-phase reactants with a substrate surface at high temperatures to form a thin film. Here are some common technical parameters of a CVD system:1. Reaction chamber temperature: Typically ranging from a few hundred to a few thousand degrees Celsius, depending on the desired reaction temperature and material.

 

2. Reaction gases: Different reaction gases can be used depending on the desired thin film material and structure, such as ammonia, hydrogen, oxygen, silicon dioxide, etc.

 

3. Pressure range: Typically ranging from a few hundred to a few thousand pascals, depending on the reactants and reaction conditions.

 

4. Reaction time: The reaction time can vary from a few minutes to several hours, depending on the desired thin film thickness and quality.

 

5. Substrate material: CVD systems can be used with various substrate materials, such as silicon, glass, metals, etc.

 

6. Application fields: CVD vapor deposition systems are widely used in materials science and engineering for the preparation of various functional thin films, including metal films, oxide films, nitride films, carbon nanotubes, etc. They have important applications in semiconductor, optoelectronics, energy, biomedical, and other fields.

 CVD vapor deposition system for including metal films

Technical parameters

RF   power supply

Signal   frequency

13.56MHz±0.005%

Power   output range

0~300W

Maximum   reflected power

100W

Reflected   power (at maximum power)

<3W

Power   stability

±0.1%

Tube furnace

Tube   material

High   purity quartz

Outer   diameter of tube

100mm

Tube   length

1200mm

Furnace   chamber length

440mm

Heating   zone length

200mm+200mm   (two temperature zone)

Constant   temperature zone length

200mm

Continuous   working temperature

Max.1100℃

Temperature   control accuracy

±1℃

Temperature   control mode

30   segment program temperature control

Display   mode

LCD

Sealing   method

304   stainless steel vacuum flange

Gas   supply

system

Model

CY-6Z

Channel   numbers

6

Measuring   unit

Mass   flow controller

Measuring   range

A   channel: 0200SCCM   for H2   

Remarks:   If other ranges are required, please specify when ordering. According to the   customer's specific requirements, the flow meter of corresponding gas type   and range is optional.

B   channel: 0200SCCM   for CH4

C   channel: 0200SCCM   for C2H4

C   channel: 0500SCCM   for N2

D   channel: 0500SCCM   for NH3

E   channel: 0500SCCM   for Ar

Measurement accuracy

±1.5%F.S

Working   pressure difference

-0.15Mpa~0.15Mpa

Connecting   pipe

304   stainless steel

Gas   channel

304   stainless steel needle valve

Interface   specification

1/4"   ferrule connector for gas inlet and outlet

Vacuum   system

Mechanical   pump

Double-stage   rotary vane pump

Pumping   rate

1.1L/S   

Vacuum   measurement

Resistance   gauge

Ultimate   vacuum

1.0E-1Pa

Pumping   interface

KF16

Sliding   rail

Can   achieve the sliding of two temperature zone furnace, to realize rapid temperature   rise and fall.

Power   supply

AC220V   50Hz



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  • Fax: +86 371 8603 6875
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