1400 degrees CVD tube furnace system

The 1400 degree CVD tube furnace  system consists of a tube furnace, flow meter and vacuum pump. The tubular furnace is PID temperature controlled by the precision temperature control meter,  which can  edit  the  multi-stage   rising  and  cooling  program,  and  has  the  function  of overheating and breaking  pairs  protection. The flanges on  both sides of the furnace tube are equipped with digital vacuum gauge and mechanical pressure gauge, which can be used to control the atmosphere in the furnace tube. At the sametime, the CVD system of the tube furnace adopts high-definition true color touchscreen operation, simple and easy to use, even non-professionals can  master  the  use  of  the instrument  after  simple  training,  which  can  greatly  improve  your experimental efficiency.

 CVD tube furnace  Product Features: 

High temperature stability: The system can operate stably at temperatures up to 1400   。 C, meeting the demand for high temperature material preparation. This high temperature stability ensures the uniformity and consistency of the material under high temperature environment.

High heating efficiency: Using advanced heating elements and temperature control technology, it can quickly heat up and maintain a stable temperature distribution, improving the preparation efficiency.

High vacuum: equipped with high vacuum system can reach a very high vacuum (such as 10^-6Pa), effectively reduce the gas impurities in the reaction chamber, and provide a pure environment for the preparation of high-quality materials.

Accurate vacuum control: with automatic control function of upper and  lower vacuum,  it can accurately control the vacuum in the reaction chamber to ensure the stability and repeatability of the preparation process.

Multi-channel flow control: The system is equipped with a multi-channel gas flow control system, such as proton flow controller and float flow controller, which can achieve accurate measurement and control of a variety of gases.

Wide flow range: wide flow range (such as 0-500sccm), which can be flexibly adjusted according to specific needs to meet the requirements of different preparation processes.

Intelligent PID temperature control: The use of intelligent PID temperature control technology can achieve  high  precision  temperature  control  to  ensure  the  stability  and   repeatability  of  the preparation process.

High degree of automation: the whole system has a high degree of automation, which can reduce the  influence  of  manual  operation  on  the  preparation  process  and  improve  the  preparation efficiency and quality.

Tubular furnace body: made of high temperature resistant material, the interior is a long tubular structure, which is convenient for the flow of reaction gas and uniform heating.

Good sealing  performance: Advanced technology  such as  KF  fast flange sealing  is adopted to ensure the tightness and air tightness of the system and prevent the influence of gas leakage on the preparation process.

Convenient  operation:  the  design  of  the  quick  connection  flange  structure  of  the  gas  path improves the convenience of operation and reduces the difficulty and cost of operation.

Buying information

If you are interested in our CVD tube furnace  system, please contact us for more information and a quote.

•     Contact number: +8615617875939

•     Email: gordon@zztainuo.com

•     Contact: Gordon Zhang

•     Wechat: 15617875939

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CVD tube furnace Technical parameters:

Main parts:

Field of application

1. Semiconductor manufacturing

In the semiconductor industry, CVD systems are widely used in the preparation of silicon- based films, silicon nitride, alumina and other thin film materials for semiconductor devices. These  films play  a  key  role  in  the  manufacturing  process  of  semiconductor  devices, affecting the performance and stability of the devices.

2 Optoelectronics

CVD systems are also used to prepare optical thin films, fiber optic coatings, and solar cell materials. In  the  field  of  optoelectronics,  these  thin  film  materials  are  essential  for improving the performance and efficiency of optical devices.

3 Materials science

The field of materials science utilizes CVD systems to prepare various coatings, ceramic films and coating materials. These materials have a wide range of application prospects in aerospace, energy, chemical and other fields.

4. Nanotechnology

In  the  field  of  nanotechnology,  CVD  systems  are  used  to  prepare  nanomaterials, nanostructured  films,  etc.  These  nanomaterials  have  unique  physical  and  chemical properties and  show  great  application  potential  in  electronics,  information,  biology, medicine and other fields.

5. Surface engineering

CVD systems can also be used to change substrate surface properties, such as increasing wettability, corrosion  resistance,  etc.  This  is  of  great  significance  for  improving  the performance and life of the material in a specific environment.

6 Other areas

In  addition to the  above fields,  CVD  system  is  also  widely  used  in  high-temperature atmosphere  sintering,  atmosphere  reduction  and  other  experimental  processes.  In universities, scientific research institutes and industrial and mining enterprises, CVD system is also an important tool for material research and development.

Application Case 《A Brief introduction to the process of preparing silicon nitride film coating using 1400 degree CVD tube furnace  system》

1. Preparation work

Material preparation: Prepare high purity silicon nitride powder or other suitable silicon source and nitrogen source (such as ammonia).

Equipment inspection: Ensure that equipment such as tube furnaces, gas line systems, vacuum pumps, inspection systems, and tailpipe treatment systems are in good condition.

Substrate treatment: Clean and pretreat the substrate to remove surface impurities and improve film adhesion.

2 Load and seal

Loading material: silicon nitride powder or precursor is placed in a sealed container and connected with nitrogen carrier gas.

Placing in the furnace tube: Place the sealed container in the furnace tube of the tubular furnace, making sure it is well sealed.

3. Gas introduction and reaction conditions are set

Gas introduction: Ammonia and silicon source gases (such as silane, etc.) are introduced into the furnace  tube  through  a  gas  path  system,  while  inert  gases  (such  as  nitrogen  or  argon)  are introduced as carrier and protection gases.

Reaction condition setting: Set the heating program of the tube furnace, so that the temperature in  the  furnace  tube  is  gradually  raised  to  the  desired  reaction  temperature  (usually  at  high temperature, such as 1400 degrees). At the same time, adjust the gas flow and reaction time to ensure that the reaction conditions are stable.

4. Chemical reaction with film deposition

Chemical reaction: At high temperatures, ammonia and silicon source gas react chemically on the surface of the substrate to generate silicon nitride and deposit on the surface of the substrate.

Film deposition: As the reaction proceeds, a silicon nitride film gradually forms on the surface of the substrate. At this point, the reaction rate and deposition time need to be controlled in order to obtain the desired thickness of the film.

5 Cool and remove

Cooling: When the reaction is complete, turnoff the heating power and allow the furnace tube to cool naturally to room temperature.

Remove the film:  Remove  the  prepared  silicon  nitride  film  coated  substrate  from  an  airtight container.

6 Test and evaluate

Quality detection: X-ray photoelectron spectroscopy (XPS), spectral elliptic spectrophotometry and other means are used to detect the composition, structure and performance of the deposited silicon nitride film.

Evaluation: Evaluate whether the quality of the film meets the requirements according to the test results, and adjust the process if there is any problem.

Precautions

Safe operation: In the whole process, safety operation procedures should be strictly observed to prevent safety hazards caused by high temperature and toxic gases.

Process  control:  strictly  control  the  reaction  temperature,  gas  flow,  reaction  time  and  other process parameters to ensure the quality and stability of the film.

Equipment  maintenance:  Regular  maintenance  and  maintenance  of  the  tube  furnace  and  its supporting equipment to ensure the normal operation of the equipment and extend the service life.

The above is a brief introduction to the basic process flow of preparing silicon nitride film coating using 1400 degree CVD tube furnace  system. The specific process may vary depending on factors such as equipment model, material type and experimental requirements.