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1200℃ three-zone rotary automatic feeding and unloading CVD system1200℃ three-zone rotary automatic feeding and unloading CVD system1200℃ three-zone rotary automatic feeding and unloading CVD system1200℃ three-zone rotary automatic feeding and unloading CVD system

1200℃ three-zone rotary automatic feeding and unloading CVD system

    In the semiconductor industry, CVD systems are widely used in the preparation of silicon- based films, silicon nitride, alumina and other thin film materials for semiconductor devices

1200 degree CVD  tube furnace system consists of tube furnace, flow meter and vacuum pump. The tubular furnace is PID temperature controlled by the precision temperature control meter, which can edit the  multi-stage  rising  and cooling  program,  and  has the function  of overheating and breaking pairs protection. The flanges on both sides of the furnace tube are equipped with digital vacuum gauge and mechanical pressure gauge, which can be used to control the atmosphere in the furnace tube. At the same time, the CVD system of the tube furnace adopts high-definition true color touchscreen operation, simple and easy to use, even non-professionals can master the use of the instrument after simple training, which can greatly improve your experimental efficiency.

Product Features

High temperature stability: The system can operate stably at temperatures up to 1200 ℃, meeting the demand for high temperature material preparation. This high temperature stability ensures the uniformity and consistency of the material under high temperature environment.

High heating efficiency: Using advanced heating elements and temperature control technology, it can quickly heat up and maintain a stable temperature distribution, improving the preparation efficiency.

High vacuum: equipped with high vacuum system can reach a very high vacuum (such as 10^-6Pa), effectively reduce the gas impurities in the reaction chamber, and provide a pure environment for the preparation of high-quality materials.

Accurate vacuum control: with automatic control function of upper and  lower vacuum,  it can accurately control the vacuum in the reaction chamber to ensure the stability and repeatability of the preparation process.

Multi-channel flow control: The system is equipped with a multi-channel gas flow control system, such as proton flow controller and float flow controller, which can achieve accurate measurement and control of a variety of gases.

Wide flow range: wide flow range (such as 0-500sccm), which can be flexibly adjusted according to specific needs to meet the requirements of different preparation processes.

Intelligent PID temperature control: The use of intelligent PID temperature control technology can achieve  high  precision  temperature  control  to  ensure  the  stability  and   repeatability  of  the preparation process.

High degree of automation: the whole system has a high degree of automation, which can reduce the  influence  of  manual  operation  on  the  preparation  process  and  improve  the  preparation efficiency and quality.

Tubular furnace body: made of high temperature resistant material, the interior is a long tubular structure, which is convenient for the flow of reaction gas and uniform heating.

Good sealing  performance: Advanced technology  such as  KF  fast flange sealing  is adopted to ensure the tightness and air tightness of the system and prevent the influence of gas leakage on the preparation process.

Convenient  operation:  the  design  of  the  quick  connection  flange  structure  of  the  gas  path improves the convenience of operation and reduces the difficulty and cost of operation.

Technical parameters:

 

Product   name

 

1200℃ three-zone rotary automatic feeding   and unloading CVD system

Product Model

CY-CVD1200-60-200*200*200-3TH-Q

Vacuum tube furnace

Furnace tube material

High purity quartz

Furnace tube diameter

50mm (optional 60mm, 80mm, 100mm)

Furnace tube length

1650mm(customizable)

Heating area length

200mm (customizable)

Length of thermostatic zone

200mm (customizable)

Operating temperature

0 ~ 1100℃

Temperature control accuracy

+ / - 1     ℃

Temperature  control mode

30 or 50 segment program temperature   control

Display mode

LCD

Sealing method

304 stainless steel vacuum flange

Flange connection

1/4 inch ferrules fitting, KF16/25/40   fitting

Vacuumable

4.4 e-3 Pa

Power supply

AC:220V 50/60Hz

Gas supply system

Product model

CY-3Z

Gas channel

3 channels (Number of channels can be   customized)

Measuring parts

Gas float flowmeter or mass flowmeter

Measuring range

Channel    A:  0  ~    100SCCM  H2

gas

Note:     If   other   range     or   gas   type     is required,  special  indication    is  required when    ordering.    The      flowmeter    of corresponding   gas type and range can be selected      according    to    the      specific requirements of customers.

B channel: 0 ~ 300SCCM N2 gas

Channel C: 0 ~ 500SCCMArgas

Measurement accuracy

Plus or minus 1.0% F.S

Pipe pressure   resistance

3MPa

Working pressure difference

50 ~ 300KPa

Connect the pipes

304 stainless steel

Control valve

304 stainless steel needle valve

Interface specifications

Air intakes and outlets are 1/4   "jacketed joints

Power supply

AC:220V 50/60Hz

Exhaust system

Vacuum pump

Rotary vane pump or molecular pump can be   customized

Pumping rate

1.1L/S or 600L/S

Exhaust port

KF16

Vacuum measurement

Resistance gauge (customizable)

Limit vacuum

1.0 e-1 Pa

Power supply

AC:220V 50/60Hz

Air extraction interface

KF16

 

Main parts:

Part name

Part description

Equipment host

One tube furnace

Water cooler

One

Front pump

Optional

Molecular pump set

Optional

Random accessories

A set

User manual

A copy

 

Field of application

1. Semiconductor manufacturing

In the semiconductor industry, CVD systems are widely used in the preparation of silicon- based films, silicon nitride, alumina and other thin film materials for semiconductor devices. These  films  play  a  key  role  in  the  manufacturing  process  of  semiconductor  devices, affecting the performance and stability of the devices.

2 Optoelectronics

CVD systems are also used to prepare optical thin films, fiber optic coatings, and solar cell materials.  In  the  field  of  optoelectronics,  these  thin  film  materials  are  essential  for improving the performance and efficiency of optical devices.

3 Materials science

The field of materials science utilizes CVD systems to prepare various coatings, ceramic films and coating materials. These materials have a wide range of application prospects in aerospace, energy, chemical and other fields.

4. Nanotechnology

In  the  field  of  nanotechnology,  CVD  systems  are  used  to  prepare  nanomaterials, nanostructured  films,  etc.  These  nanomaterials  have  unique  physical  and  chemical properties  and  show  great  application  potential  in  electronics,  information,  biology, medicine and other fields.

5. Surface engineering

CVD systems can also be used to change substrate surface properties, such as increasing wettability,  corrosion  resistance,  etc.  This  is  of  great  significance  for  improving  the performance and life of the material in a specific environment.

6 Other areas

In  addition to the  above fields,  CVD  system  is  also  widely  used  in  high-temperature atmosphere  sintering,  atmosphere  reduction  and  other  experimental  processes.  In universities, scientific research institutes and industrial and mining enterprises, CVD system is also an important tool for material research and development.

 

 

Application Case Introduction to the process of preparing graphene film coating using 1200 degree tube furnace CVD System

 

1. Preparation stage

Material preparation: Select asuitable metal base, such as copper (Cu), nickel (Ni), etc., which acts as both a growth base and a catalyst during the CVD growth of graphene.

Prepare carbon source gases such as methane (CH), ethanol,etc. These are the source of carbon atoms that form graphene.

Prepare a protective gas such as hydrogen (H), argon (Ar), or nitrogen (N) to protect the metal substrate from oxidation during heating and cooling.

Equipment inspection: Make sure the 1200 degree tube furnace CVD system is in good working order, including the gas supply system, tube furnace, air extraction system, etc.

Check that the vacuum system is able to reach the required vacuum degree, usually requiring a limit vacuum of 10^-3 Pa or higher.

2 Heat and grow phases

Loading base: Place the cleaned metal base into the tube furnace and secure it in place.

Vacuum and heating: Close the inlet valve and outlet valve of the tube furnace, start the vacuum pump to extract the air in the furnace until the required vacuum degree is reached.

Heat the tube furnace to a predetermined temperature, usually around 1000 。C, and keep it for a period of time to stabilize the temperature. This process may require a protective gas to prevent oxidation of the metal substrate.

Carbon source gas: When the temperature in the furnace is stable, stop the protection gas and change to carbon source gas, such as methane. The source gas will crack at high temperatures, and the resulting carbon atoms will nucleate and grow into graphene films on the surface of the metal substrate.

Growth process: After the carbon source gas is passed through, the reaction will continue for a period of time, depending on the thickness and quality of the graphene film required. During this process, the carbon atoms dissolve, diffuse and grow into a graphene film on the surface of the metal substrate.

 

3 Cool down and remove stage

Cutoff carbon source gas: After the growth process is complete, cutoff the supply of carbon source gas.

Through the protective gas cooling: change the protective gas (such as hydrogen, argon or nitrogen), and turn on the cooling system of the tube furnace, so that the temperature in the furnace is  gradually reduced to room temperature. The role of the protective gas is to prevent the oxidation  of the metal substrate and the graphene film during the cooling process.

Remove the sample: When the temperature in the furnace has dropped to room temperature, open the furnace door of the tube furnace and remove the sample of the graphene film coating on the metal substrate.

 

4 Followup treatment

Washand dry: The sample is cleaned to remove impurities and residue from the surface, and dried.

Detection and characterization: The morphology, structure and quality of the graphene film coating are detected and characterized by microscopes, Raman spectrometers and other equipment.

 

Matters needing attention

 

During the whole preparation process, parameters such as temperature, gas flow, reaction time and so on need to be strictly controlled to ensure the quality and performance of the graphene film coating.

Attention should be paid to safety during the preparation process to avoid harm to personnel and equipment by risk factors such as high temperature and high pressure.

After the preparation, the equipment should be cleaned and maintained in time to extend the service life of the equipment and keep the equipment in good working condition.

The above is the basic process flow of preparing graphene film coating using 1200 degree tube furnace CVD system. It should be noted that the specific process parameters and steps may vary depending on the type of equipment, type of material and preparation requirements. Therefore, in the actual operation should be adjusted and optimized according to the specific situation.

 


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  • Fax: +86 371 8603 6875
  • Add: No. 820, 8th Floor, 1st Unit, 9th Block, Cuizhu Street, High-Tech Zone, Zhengzhou, Henan, China




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